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| Bulletin I25204 rev. B 09/03 110/111RIA SERIES PHASE CONTROL THYRISTORS Stud Version Features High current and high surge ratings Hermetic glass-metal seal up to 1200V 110A Typical Applications DC motor controls Controlled DC power supplies AC controllers Major Ratings and Characteristics Parameters IT(AV) @ TC IT(RMS) ITSM @ 50Hz @ 60Hz I 2t @ 50Hz @ 60Hz V DRM /V RRM tq TJ typical 110/111RIA 110 90 172 2080 2180 21.7 19.8 800 to 1200 110 - 40 to 140 Units A C A A A KA2s KA2s V s C case style TO-209AC (TO-94) www.irf.com 1 110/111RIA Series Bulletin I25204 rev. B 09/03 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage Type number 110/111RIA Code 80 120 V DRM/V RRM , max. repetitive peak and off-state voltage V 800 1200 repetitive peak voltage V 900 1300 VRSM , maximum non- I DRM/I RRM max. @ TJ = TJ max. mA 20 On-state Conduction Parameter I T(AV) Max. average on-state current @ Case temperature I T(RMS) Max. RMS on-state current I TSM Max. peak, one-cycle non-repetitive surge current 110/111RIA 110 90 172 2080 2180 1750 1830 Units Conditions A C DC @ 83C case temperature t = 10ms A t = 8.3ms t = 10ms t = 8.3ms t = 10ms KA2 s t = 8.3ms t = 10ms t = 8.3ms KA2 s No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max. 180 conduction, half sine wave I2t Maximum I2t for fusing 21.7 19.8 15.3 14.0 I 2 t Maximum I2t for fusing 217 0.82 t = 0.1 to 10ms, no voltage reapplied (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. V T(TO)1 Low level value of threshold voltage V T(TO)2 High level value of threshold voltage r t1 r t2 V TM IH IL Low level value of on-state slope resistance High level value of on-state slope resistance Max. on-state voltage Maximum holding current Typical latching current V 1.02 (I > x IT(AV)),TJ = TJ max. (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. m 1.70 1.57 150 400 V mA (I > x IT(AV)),TJ = TJ max. Ipk= 350A, TJ = TJ max., tp = 10ms sine pulse T J = 25C, anode supply 6V resistive load 2.16 Switching Parameter di/dt Max. non-repetitive rate of rise of turned-on current td tq Typical delay time Typical turn-off time 110/111RIA 300 1 Units Conditions A/s Gate drive 20V, 20, tr 1s TJ = TJ max, anode voltage 80% VDRM Gate current 1A, di g /dt = 1A/s Vd = 0.67% VDRM, TJ = 25C s 110 ITM = 50A, TJ = TJ max., di/dt = -5A/s, VR = 50V dv/dt = 20V/s, Gate 0V 25 2 www.irf.com 110/111RIA Series Bulletin I25204 rev. B 09/03 Blocking Parameter dv/dt IRRM IDRM Maximum critical rate of rise of off-state voltage Max. peak reverse and off-state leakage current 110/111RIA 500 20 Units Conditions V/s mA TJ = TJ max. linear to 80% rated VDRM TJ = TJ max, rated V DRM/V RRM applied Triggering Parameter PGM IGM +VGM -VGM Maximum peak gate power Max. peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage TYP. IGT DC gate current required to trigger 180 80 40 VGT DC gate voltage required to trigger 2.5 1.6 1 IGD VGD DC gate current not to trigger DC gate voltage not to trigger 6.0 0.25 PG(AV) Maximum average gate power 110/111RIA 12 3.0 3.0 20 Units Conditions W A TJ = TJ max, t p 5ms TJ = TJ max, f = 50Hz, d% = 50 TJ = TJ max, t p 5ms V 10 MAX. 120 2 mA V V mA TJ = TJ max, tp 5ms TJ = - 40C TJ = 25C TJ = 140C TJ = - 40C TJ = 25C TJ = 140C TJ = TJ max Max. gate current/ voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied Max. required gate trigger/ current/ voltage are the lowest value which will trigger all units 12V anode-to-cathode applied Thermal and Mechanical Specification Parameter TJ Tstg RthJC RthCS T Max. operating temperature range Max. storage temperature range Max. thermal resistance, junction to case Max. thermal resistance, case to heatsink Mounting torque, 10% 110/111RIA -40 to 140 -40 to 150 0.27 Units Conditions C DC operation K/W 0.1 15.5 (137) 14 (120) Nm (lbf-in) Mounting surface, smooth, flat and greased Non lubricated threads Lubricated threads wt Approximate weight Case style 130 g See Outline Table TO - 209AC (TO-94) www.irf.com 3 110/111RIA Series Bulletin I25204 rev. B 09/03 RthJC Conduction Conduction angle 180 120 90 60 30 (The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC) Sinusoidal conduction Rectangular conduction Units 0.043 0.052 0.066 0.096 0.167 0.031 0.053 0.071 0.101 0.169 K/W Conditions TJ = TJ max. T J = T J max. Ordering Information Table Device Code 11 1 1 2 3 4 - 1 2 RIA 120 3 4 IT(AV) rated average output current (rounded/10) 0 = Eyelet terminals (Gate and Auxiliary Cathode Leads) 1 = Fast - on terminals (Gate and Auxiliary Cathode Leads) Thyristor Voltage code: Code x 10 = VRRM (See Voltage Rating Table) NOTE: For Metric Device M12 x 1.75 Contact Factory 4 www.irf.com 110/111RIA Series Bulletin I25204 rev. B 09/03 Outline Table GLASS METAL SEAL 16.5 (0.65) MAX. 8.5 (0.3) DIA. 4.3 (0.17) DIA. 37 )M IN (0 . 9.5 20 (0 . 79 )M IN . 2.5 (0.10) MAX. FLEXIBLE LEAD C.S. 16mm (.025 s.i.) RED SILICON RUBBER 157 (6.18) 170 (6.69) RED CATHODE WHITE GATE C.S. 0.4 mm (.0006 s.i.) 2 2 . Fast-on Terminals AMP. 280000-1 REF-250 10 (0.39) 55 (2.17) MIN. 215 (8.46) RED SHRINK WHITE SHRINK 24 (0.94) MAX. 10 (0.39) MAX. 23.5 (0.92) MAX. DIA. 21 (0.83) MAX. SW 27 1/2"-20UNF-2A * 29.5 (1.16) MAX. Case Style TO-209AC (TO-94) All dimensions in millimeters (inches) * FOR METRIC DEVICE: M12 X 1.75 CONTACT FACTORY Maximum Allowable Case Temperature (C) 140 130 120 Maximum Allowable Case Temperature (C) 110/111RIA 111RIA SeriesSeries RthJC (DC) = 0.27 K/W 140 130 120 110/111RIA Series 111RIA Series RthJC (DC) = 0.27 K/W Conduction Angle Conduction Period 110 100 90 80 70 0 30 60 90 120 150 180 Average On-State Current (A) Fig. 2 - Current Ratings Characteristics 110 100 30 30 60 90 120 180 DC 90 80 0 20 40 60 90 120 180 60 80 100 120 Average On-State Current (A) Fig. 1 - Current Ratings Characteristics www.irf.com 5 110/111RIA Series Bulletin I25204 rev. B 09/03 Maximum Allowable On-State Power Loss (W) 160 140 120 100 80 60 40 20 0 0 180 120 90 60 30 RMS Limit SA R th K/ W 0.8 K/ W 1K /W 0. 6 W K/ .3 =0 aR elt -D Conduction Angle 1.5 K/W 2K /W 110/111RIA Series 111RIA Series T J = 140C 4 K/W 5 K/W 20 40 60 80 100 120 0 20 40 60 80 100 120 140 Average On-State Current (A) Maximum Allowable Ambient Temperature (C) Maximum Allowable On-State Power Loss (W) Fig. 3 - On-State Power Loss Characteristics 220 200 180 160 140 120 DC 180 120 90 60 30 R A thS = 0. 3 K/ W 100 RMS Limit 80 60 40 20 0 0 Conduction Period 0.6 K/ W 0.8 K/W 1K /W 1.5 K/W 2 K/W 4 K/W -D el ta R 110/111RIA Series 111RIA Series T = 140C J 5 K/W 0 20 40 60 80 100 120 140 160 180 20 Average On-State Current (A) 40 60 80 100 120 140 Maximum Allowable Ambient Temperature (C) Fig. 4 - On-state Power Loss Characteristics Peak Half Sine Wave On-State Current (A) 2000 1800 1600 1400 1200 At Any Rated Load Condition And With Rated Vrrm Applied Following Surge. Initial Tj = 140C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 2500 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial Tj = 140C 2000 No Voltage Reapplied Rated Vrrm Reapplied 1500 1000 1000 800 1 110/111RIA Series 111RIA Series 10 100 110/111RIA Series 111RIA Series 500 0.01 0.1 1 10 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current 6 www.irf.com 110/111RIA Series Bulletin I25204 rev. B 09/03 Instantaneous On-State Current (A) 10000 Tj = 25C 1000 Tj = 140C 100 10 110/111RIA Series 111RIA Series 1 0 1 2 3 4 5 Instantaneous On-State Voltage (V) Fig. 7 - On-State Voltage Drop Characteristics Transient Thermal Impedance Z thJC (K/W) 1 Steady State Value RthJC = 0.27 K/W (DC Operation) 0.1 0.01 110/111RIA Series 111RIA Series 0.001 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance Z thJC Characteristic 100 Instantaneous Gate Voltage (V) Rectangular gate pulse a) Recommended load line for rated di/dt: 20V, 30ohms; tr<=0.5 s, tp=>6s b) Recommended load line for 10 <=30% rated di/dt: 15V, 40ohms tr<=1 s, tp=>6s (1) PGM = 12W, tp = 5ms (2) PGM = 30W, tp = 2ms (3) PGM = 60W, tp = 1ms (4) PGM = 200W, tp = 300s (a) (b) Tj=-40 C Tj=25 C 1 VGD 0.1 0.001 IGD 0.01 Tj=140 C (1) (2) (3) (4) Device: 110/111RIA Series Device: 111RIA Series Frequency Limited by PG(AV) 0.1 1 10 100 1000 Instantaneous Gate Current (A) Fig. 9 - Gate Characteristics www.irf.com 7 110/111RIA Series Bulletin I25204 rev. B 09/03 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 03/03 8 www.irf.com |
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